公开(公告)号：US20100163837A1

公开(公告)日：2010-07-01

申请号：US12526534

申请日：2008-01-31

申请人： Oktay Yilmazoglu ,  Kabula Mutamba ,  Dimitris Pavlidis ,  Tamer Karduman

发明人： Oktay Yilmazoglu ,  Kabula Mutamba ,  Dimitris Pavlidis ,  Tamer Karduman

IPC分类号： H01L47/02

CPC分类号： H01L47/026

摘要： A Gunn diode includes an active layer having a top and a bottom, a first contact layer disposed adjacent to the top of the active layer, a second contact layer disposed adjacent to the bottom of the active layer, wherein the first and second contact layers are more heavily doped than the active layer, and at least one outer contact layer disposed at an outer region of at least one of the first and second contact layers, the at least one outer contact layer being more heavily doped than the first and second contact layers, wherein the first and second contact layers, the active layer, and the at least one outer contact layer include a base material that is the same.

摘要翻译： 耿氏二极管包括具有顶部和底部的有源层，邻近有源层顶部设置的第一接触层，邻近有源层底部设置的第二接触层，其中第一和第二接触层是 比有源层​​更重掺杂，以及至少一个外部接触层，其设置在第一和第二接触层中的至少一个的外部区域处，所述至少一个外部接触层比第一和第二接触层更重掺杂 ，其中所述第一和第二接触层，所述有源层和所述至少一个外部接触层包括相同的基底材料。