Artifact-Reducing Pixel And Method

    公开(公告)号:US20230079156A1

    公开(公告)日:2023-03-16

    申请号:US17475876

    申请日:2021-09-15

    Abstract: A pixel includes a semiconductor substrate that includes a floating diffusion region and a photodiode region. The pixel also includes, between a front surface of the semiconductor substrate and a back surface opposing the front surface: a first trench and a second trench adjacent to the first trench in a separation direction that is both (a) parallel to the front surface and (b) in a plane that is perpendicular to the front surface. Each of the first and second trench (a) is between the floating diffusion region and the photodiode region and (b) extends into the semiconductor substrate from the front surface. In the separation direction, a top average-separation between the first and second trench, at depths between the front surface and a first depth in the semiconductor substrate, exceeds a bottom average-separation between the first and second trench, at depths exceeding the first depth.

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