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1.发明授权
公开(公告)号：US3622901A
公开(公告)日：1971-11-23
申请号：US3622901D
申请日：1968-08-06
Applicant: PHILIPS CORP
Inventor： LEDRAN JEAN PAUL , GUIOCHON PAUL
CPC classification number: H01C17/12 , H01C7/041 , Y10T29/49085 , Y10T29/49099
Abstract: A negative-temperature-coefficient resistor formed by applying a thin semiconductive silicon carbide layer to a substrate.
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