公开(公告)号：US20160025962A1

公开(公告)日：2016-01-28

申请号：US14774024

申请日：2014-03-14

Applicant: PIXTRONIX, INC.

Inventor： Takehide Kuranaga ,  Toshihiko Itoga ,  Jun Fujiyoshi ,  Masaya Adachi

IPC: G02B26/02

CPC classification number: G02B26/02 ,  G02B26/023

Abstract: [PROBLEM] To provide a display device capable of improving the transmittance of light at an opening that passes light while maintaining high reflectivity in a reflective layer. [RESOLUTION MEANS] Use a metal film and an reflection increasing film to configure a reflective layer provided in an element substrate to effectively utilize light of a light source. Leave a silicon nitride film that is one portion of the reflection increasing film in the opening that passes the light of the light source while removing the metal film. At this time, the film thickness of the silicon nitride film in the reflection increasing film is ¼ the wavelength of incident light and, on the other hand, the film thickness of the silicon nitride film in the opening is ½ the wavelength of the incident light. The silicon nitride film that is one portion of the reflection increasing film and a passivation film provided in a top layer of an interlayer dielectric film are laminated in the opening to achieve this structure.

Abstract translation: 本发明提供一种能够改善在透光的开口处的光的透射率同时保持反射层中的高反射率的显示装置。 [解决方案]使用金属膜和反射增加膜来配置设置在元件基板中的反射层以有效地利用光源的光。 在去除金属膜的同时，在通过光源的光的开口中留下作为反射增加膜的一部分的氮化硅膜。 此时，反射增加膜中的氮化硅膜的膜厚为入射光的波长，另一方面，开口中的氮化硅膜的膜厚为入射光的波长的1/2 。 作为反射增加膜的一部分的氮化硅膜和设置在层间电介质膜的顶层中的钝化膜层压在开口中以实现该结构。