公开(公告)号：US20210006042A1

公开(公告)日：2021-01-07

申请号：US16912018

申请日：2020-06-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： AKIHIKO ISHIBASHI ,  HIROSHI OHNO ,  JUNICHI TAKINO ,  TOMOAKI SUMI

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/20 ,  H01S5/042

Abstract: A group-III nitride semiconductor laser device includes a GaN substrate, and an active layer provided on the GaN substrate, in which the GaN substrate has an oxygen concentration of 5×1019 cm−3 or more, and an absorption coefficient of the GaN substrate with respect to an oscillation wavelength of the active layer is greater than an absorption coefficient of the active layer with respect to the oscillation wavelength.