-
公开(公告)号:US10090220B2
公开(公告)日:2018-10-02
申请号:US15427629
申请日:2017-02-08
Inventor: Ayanori Ikoshi , Masahiro Hikita , Keiichi Matsunaga , Takahiro Sato , Manabu Yanagihara
IPC: H01L23/31 , H01L23/29 , H01L23/00 , H01L23/528 , H01L29/06 , H01L29/417
Abstract: A semiconductor device includes a substrate; a semiconductor layer; a first protective film; a first adhesive layer disposed on the first protective film; an electrode pad disposed on the first protective film; a second protective film disposed to cover and be in contact with the electrode pad and the first adhesive layer; and a first opening formed in part of the second protective film such that the upper surface of the electrode pad is exposed, wherein in a plan view, the first adhesive layer includes a first projection projecting from the electrode pad radially in a direction of the periphery of the electrode pad and continuously surrounding the periphery of the electrode pad; and the second protective film is continuously to cover and contact part of the upper and side surfaces of the electrode pad, the upper and side surfaces of first projection, and the first protective film.