公开(公告)号：US20160035853A1

公开(公告)日：2016-02-04

申请号：US14884815

申请日：2015-10-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SAICHIROU KANEKO ,  HIROTO YAMAGIWA ,  AYANORI IKOSHI ,  MASAYUKI KURODA ,  MANABU YANAGIHARA ,  KENICHIRO TANAKA ,  TETSUYUKI FUKUSHIMA

IPC: H01L29/47 ,  H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/872

CPC classification number: H01L29/475 ,  H01L21/28 ,  H01L29/0619 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

Abstract translation: 在本公开的半导体器件中，第一氮化物半导体层在与第二氮化物半导体层的界面附近具有二维电子气体通道。 在平面图中，电极部分设置在第一电极和第二电极之间，第一电极和第二电极之间具有空间，并且第二电极和电极部分之间的空间小于第一电极和第二电极之间的空间， 电极部分。 能量势垒设置在电极部分和第二氮化物半导体层之间的接合面中，能量势垒指示从电极部分到第二氮化物半导体层的向前方向的整流作用，以及第二氮化物半导体的带隙 层比第一氮化物半导体层的带隙宽。