公开(公告)号：US12184118B2

公开(公告)日：2024-12-31

申请号：US18257816

申请日：2021-12-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroki Akashi ,  Masafumi Nakamura ,  Masatoshi Nakase ,  Yuta Nagatomi ,  Kinya Kato

IPC: B60R16/033 ,  H02J7/00 ,  H02J7/34 ,  H02J9/06

Abstract: A backup power supply control system includes: a first semiconductor switch that switches a main power supply line to an electrically conductive state or an electrically non-conductive state; and an auxiliary power supply switch that switches an auxiliary power supply line to the electrically conductive state or the electrically non-conductive state. A first driving unit controls, in a non-failure state, a second semiconductor switch, connected between a gate and source of a first semiconductor switch, OFF and thereby controls the first semiconductor switch ON. The first driving unit ensures, in the failure state, at least a gate-plateau voltage of the first semiconductor switch as a drive voltage for the second semiconductor switch. When a failure detection unit detects the failure state, the first driving unit controls the first semiconductor switch OFF by controlling the second semiconductor switch ON and a second driving unit controls the auxiliary power supply switch ON.

公开(公告)号：US12143098B2

公开(公告)日：2024-11-12

申请号：US17998658

申请日：2021-04-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yusuke Kinoshita ,  Yuta Nagatomi ,  Ryosuke Maeda ,  Satoshi Nakazawa

IPC: H03K17/082

Abstract: A power loss of a switching device is suppressed. Circuit for a switching device is used in switching device. Switching device includes first path and second path. First path includes first field effect transistor and first inductor. Second path includes second field effect transistor and second inductor. First path and second path are connected in parallel to power supply. A first maximum current that is a maximum current during conduction of first field effect transistor is smaller than a second maximum current that is a maximum current during conduction of second field effect transistor. Circuit for a switching device includes processing part. Processing part executes a specific operation according to a voltage difference between voltage across first inductor and voltage across second inductor.