公开(公告)号：US20140248772A1

公开(公告)日：2014-09-04

申请号：US14279260

申请日：2014-05-15

申请人： Paul MA ,  Joseph F. AUBUCHON ,  Jiang LU ,  Mei CHANG

发明人： Paul MA ,  Joseph F. AUBUCHON ,  Jiang LU ,  Mei CHANG

IPC分类号： H01L21/768

CPC分类号： H01L21/76841 ,  C23C16/45534 ,  C23C16/52

摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).

摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体 含有二甲胺（DMA）。