摘要:
A mixed-height cell library for designing integrated circuits is provided. The mixed-height cell library includes a first plurality of cells having a first track height and a second plurality of cells having a second track height that are configured to be coupled to the first plurality of cells at respective power and ground rail lines. A method for mixed-height cell placement and optimization is also provided. The method comprises abutting cells of different track heights to form a plurality of rows of cells by coupling power and ground rails of the cells at a secondary layer that is different from a primary layer that is used to connect active material and determining whether re-ordering cells within rows allows for further compaction of adjacent rows. The method further comprises re-ordering cells within rows so to allow for further compaction of adjacent rows. The method also includes the steps of splitting rows vertically to minimize the distance between the split rows.
摘要:
A mixed-height cell library for designing integrated circuits is provided. The mixed-height cell library includes a first plurality of cells having a first track height and a second plurality of cells having a second track height that are configured to be coupled to the first plurality of cells at respective power and ground rail lines. A method for mixed-height cell placement and optimization is also provided. The method comprises abutting cells of different track heights to form a plurality of rows of cells by coupling power and ground rails of the cells at a secondary layer that is different from a primary layer that is used to connect active material and determining whether re-ordering cells within rows allows for further compaction of adjacent rows. The method further comprises re-ordering cells within rows so to allow for further compaction of adjacent rows. The method also includes the steps of splitting rows vertically to minimize the distance between the split rows.
摘要:
An automated method for packing cells in the generation of an integrated circuit design layout that is especially useful for circuits having symmetry constraints, which is the case for most analog circuits, uses sequence pair encoding and simulated annealing. From the set of all cells needed to implement the circuit, subsets of the cells are defined that must exhibit symmetry. Symmetry constraints are defined for each subset and the cells are encoded as ordered sequence-pairs. To reduce the solution space, the initial sequence pair encoding is required to be symmetry-feasible and the annealer subspace is limited to symmetry-feasible sequence-pairs.
摘要:
In one embodiment, a number of parameter values for an inductor, such as a spiral inductor, are received. Examples of the parameter values are Number of Turns, Spacing, Width, Xsize, and Ysize parameter values. From the received parameter values, a number of parasitic values for a subcircuit model of the inductor are determined. For example, parasitic resistor values and parasitic capacitor values of the inductor are determined. The parasitic resistor values and parasitic capacitor values are used in simulating the circuit comprising the inductor. An inductor layout is then generated that results in parasitic values that are the same as the parasitic values already used in simulating the circuit comprising the inductor. As such, the parasitic values of the inductor have already been taken into account in the initial circuit simulation and, there is no need to extract the internal parasitics of the inductor for further circuit simulations.
摘要:
In one disclosed embodiment, a number of parameter values for an RF MOSFET are received. Examples of parameter values are style, bulk contact, finger width, finger length, number of fingers, current, and slice parameter values. From the received parameter values, a number of parasitic values for a subcircuit model of the RF MOSFET are determined. For example, parasitic resistor values and parasitic capacitor values of the RF MOSFET are determined. The parasitic resistor values and parasitic capacitor values are used in simulating the circuit comprising the RF MOSFET. An RF MOSFET layout is then generated that results in parasitic values that are the same as the parasitic values already used in simulating the circuit comprising the RF MOSFET. As such, the parasitic values of the RF MOSFET have already been taken into account in the initial circuit simulation.