公开(公告)号：US07354778B2

公开(公告)日：2008-04-08

申请号：US10656353

申请日：2003-09-05

申请人： Percy Heger ,  Tobias Hoerning ,  Ralf Otto

发明人： Percy Heger ,  Tobias Hoerning ,  Ralf Otto

IPC分类号： H01L21/00

CPC分类号： H01J37/32935 ,  H01J37/32963

摘要： A method is provided for determining the end point during cleaning etching of processing chambers by means of plasma etching, which is used for carrying out coating or etching processes during the manufacture of semiconductor components. The invention provides a method for effectively and reliably determining the end point during cleaning etching of processing chambers. The end point is determined by monitoring the DC bias voltage on the plasma generator which is used for the plasma cleaning etching in the processing chamber in an evaluation unit. The plasma cleaning etching process is terminated by stopping the supply of the process gases in the gas supply unit and by switching off the plasma generator upon reaching a predetermined DC bias voltage value which corresponds to completion of the cleaning etching process.

摘要翻译： 提供了一种用于通过等离子体蚀刻在处理室的清洗蚀刻期间确定终点的方法，其用于在制造半导体部件期间执行涂覆或蚀刻工艺。 本发明提供了一种在处理室的清洗蚀刻期间有效和可靠地确定终点的方法。 通过监视等离子体发生器中用于评估单元中的处理室中的等离子体清洗蚀刻的DC偏置电压来确定终点。 等离子体清洗蚀刻工艺通过停止气体供应单元中的处理气体的供应并通过在达到对应于清洁蚀刻工艺完成的预定直流偏置电压值时关闭等离子体发生器来终止。