公开(公告)号：US20050130390A1

公开(公告)日：2005-06-16

申请号：US10733845

申请日：2003-12-11

申请人： Peter Andrews ,  Elbert Brown ,  Gerald Negley

发明人： Peter Andrews ,  Elbert Brown ,  Gerald Negley

IPC分类号： B23K26/40 ,  B28D1/22 ,  B28D5/00 ,  H01L21/78 ,  H01L33/00 ,  H01L21/50 ,  H01L23/544

CPC分类号： H01L21/78 ,  B23K26/3568 ,  B23K26/359 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  B28D5/0011 ,  H01L33/0095 ,  H01L2924/10155

摘要： A method for forming semiconductor devices using a semiconductor substrate having first and second opposed surfaces and including first and second device regions includes directing a beam of laser light at the substrate such that the beam of laser light is focused within the substrate between the first and second surfaces thereof and the beam of laser light forms a thermally weakened zone (TWZ) in the substrate. The TWZ extends between the first and second device regions and defines a break line.

摘要翻译： 使用具有第一和第二相对表面并且包括第一和第二器件区域的半导体衬底形成半导体器件的方法包括将激光束引导到衬底，使得激光束聚焦在衬底内的第一和第二 其表面和激光束在衬底中形成热弱化区（TWZ）。 TWZ在第一和第二装置区域之间延伸并且限定断裂线。

公开(公告)号：US07008861B2

公开(公告)日：2006-03-07

申请号：US10733845

申请日：2003-12-11

申请人： Peter Andrews ,  Elbert Brown ,  Gerald H. Negley

发明人： Peter Andrews ,  Elbert Brown ,  Gerald H. Negley

IPC分类号： H01L21/301 ,  H01L23/00

CPC分类号： H01L21/78 ,  B23K26/3568 ,  B23K26/359 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  B28D5/0011 ,  H01L33/0095 ,  H01L2924/10155

摘要： A method for forming semiconductor devices using a semiconductor substrate having first and second opposed surfaces and including first and second device regions includes directing a beam of laser light at the substrate such that the beam of laser light is focused within the substrate between the first and second surfaces thereof and the beam of laser light forms a thermally weakened zone (TWZ) in the substrate. The TWZ extends between the first and second device regions and defines a break line.

摘要翻译： 使用具有第一和第二相对表面并且包括第一和第二器件区域的半导体衬底形成半导体器件的方法包括将激光束引导到衬底，使得激光束聚焦在衬底内的第一和第二 其表面和激光束在衬底中形成热弱化区（TWZ）。 TWZ在第一和第二装置区域之间延伸并且限定断裂线。