公开(公告)号：US06469363B1

公开(公告)日：2002-10-22

申请号：US09304919

申请日：1999-05-04

申请人： Philippe Delpech ,  Nathalie Revil

发明人： Philippe Delpech ,  Nathalie Revil

IPC分类号： H01L2900

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit fuse is formed on a substrate by etching a polysilicon, metal or alloy layer deposited thereon to include a central region, at the end of which are zones with electrical contacts. The central region has at least two first electrically parallel arms. A zone of intersection of the first two arms forms a point for focusing a fusing current which facilitates the fusing of the fuse by increasing local current density flowing through the integrated circuit.

摘要翻译： 通过蚀刻沉积在其上的多晶硅，金属或合金层以包括中心区域在基板上形成集成电路保险丝，其中末端是具有电触点的区域。 中心区域具有至少两个第一电平行臂。 前两个臂的相交区域形成用于聚焦定影电流的点，其通过增加流过集成电路的局部电流密度来促进熔丝的熔合。

公开(公告)号：US06271574B1

公开(公告)日：2001-08-07

申请号：US09310264

申请日：1999-05-12

申请人： Philippe Delpech ,  Nathalie Revil

发明人： Philippe Delpech ,  Nathalie Revil

IPC分类号： H01L2900

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit fuse includes a substantially bar-shaped central region and zones having electrical contacts. The central region includes a thinned zone forming a weak point facilitating fusing of the fuse by increasing the local current density as compared to standard fusing conditions. The thinned zone is preferably obtained by proximity optical effect between the fuse and adjacent dummy elements.

摘要翻译： 集成电路熔断器包括大致条形中心区域和具有电触点的区域。 中心区域包括形成弱点的薄区，与标准熔化条件相比，通过增加局部电流密度便于保险丝的熔合。 优选通过熔丝和相邻虚设元件之间的接近光学效应来获得变薄区。