公开(公告)号：US10930698B2

公开(公告)日：2021-02-23

申请号：US16383663

申请日：2019-04-15

Applicant: PixArt Imaging Inc.

Inventor： Kai-Chieh Chuang ,  Yung-Chung Lee ,  Yen-Min Chang

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/353 ,  H04N5/378

Abstract: There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.

公开(公告)号：US12199125B2

公开(公告)日：2025-01-14

申请号：US17110298

申请日：2020-12-03

Applicant: PixArt Imaging Inc.

Inventor： Kai-Chieh Chuang ,  Yung-Chung Lee ,  Yen-Min Chang

IPC: H01L27/146 ,  H04N25/59

Abstract: There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.