公开(公告)号：US20090002058A1

公开(公告)日：2009-01-01

申请号：US11769611

申请日：2007-06-27

申请人： Po Yao Ker ,  Shine Chung ,  Fu-Lung Hsueh

发明人： Po Yao Ker ,  Shine Chung ,  Fu-Lung Hsueh

IPC分类号： H01H37/76 ,  G11C5/14

CPC分类号： G11C17/18 ,  G11C5/147

摘要： The present invention discloses a bias circuit for a sense amplifier having a device under sensing, the device under sensing having an un-programmed state and a programmed state, the bias circuit comprises at least one first branch having at least one first device formed substantially the same as the device under sensing and remaining in the un-programmed state, and at least one second device formed also substantially the same as the device under sensing and being in the programmed state, wherein the at least one first device and the at least one second device are serially connected. A typical application of the present invention is an electrical fuse memory.

摘要翻译： 本发明公开了一种用于感测放大器的偏置电路，其具有被感测的器件，该感测器件处于非编程状态和编程状态，该偏置电路包括至少一个第一分支，该第一分支具有至少一个基本上形成 与感测下的设备相同并且保持在未编程状态，并且至少一个第二设备形成也与感测下的设备基本相同并处于编程状态，其中至少一个第一设备和至少一个 第二设备串联连接。 本发明的典型应用是电熔丝存储器。