Apparatus for identifying state-dependent, defect-related leakage currents in memory circuits
    1.
    发明申请
    Apparatus for identifying state-dependent, defect-related leakage currents in memory circuits 失效
    用于识别存储器电路中与状态有关的缺陷相关泄漏电流的装置

    公开(公告)号:US20030098693A1

    公开(公告)日:2003-05-29

    申请号:US09997135

    申请日:2001-11-28

    Inventor: Klaus Enk

    CPC classification number: G01R31/3004 G11C29/50 G11C2029/5006

    Abstract: The invention provides an apparatus for identifying state dependent defect related leakage currents in a tested circuit with a defect. The apparatus comprises a test system providing an input signal and an operating voltage, and a reference circuit the same as the tested circuit but without the defect receiving the input signal and the operating voltage, and operating at a first operating current, wherein, the tested circuit also receives the input signal and the operating voltage, and operates at a second operating current, and the test system senses a difference of the first and second operating current.

    Abstract translation: 本发明提供一种用于在具有缺陷的测试电路中识别与状态相关的缺陷相关的泄漏电流的装置。 该装置包括提供输入信号和工作电压的测试系统以及与测试电路相同但没有接收输入信号和工作电压的缺陷并在第一工作电流下操作的参考电路,其中,测试 电路还接收输入信号和工作电压,并在第二工作电流下工作,并且测试系统检测第一和第二工作电流的差异。

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