公开(公告)号：US20030161176A1

公开(公告)日：2003-08-28

申请号：US10189506

申请日：2002-07-08

Applicant: ProMOS Technologies Inc.

Inventor： Matthias Klaus

IPC: G11C011/22

CPC classification number: G11C29/026 ,  G11C29/02 ,  G11C2029/5004

Abstract: A method for measuring a bias voltage of plural sense amplifiers in a memory device is provided. The method includes the steps of: selecting the plural sense amplifiers as a measurement area, writing a midlevel voltage into the respective memory cell modules connected to the plural the sense amplifiers respectively, providing a reference voltage of the midlevel voltage into the plural sense amplifiers in the measurement area, recording output signals of the plural sense amplifiers, wherein the output signal is valued one of null0null and null1null, counting numbers of null0null and null1null, and obtaining a ratio of the number of null0null over the number of null1null, and obtaining the bias voltage of the plural sense amplifiers in the measurement area as the ratio.