公开(公告)号：US20030059996A1

公开(公告)日：2003-03-27

申请号：US10060590

申请日：2002-01-30

Applicant: ProMos Technologies Inc.

Inventor： Nien-Yu Tsai ,  Yung-Ching Wang

IPC: H01L021/8238

CPC classification number: H01L21/76897 ,  H01L21/28247 ,  H01L21/823425 ,  H01L21/823475

Abstract: A method for forming a gate structure is provided. The forming method includes steps of providing a semiconductor substrate; forming an insulation layer, a first gate conductor layer, a second gate conductor layer, and a masking layer on the semiconductor substrate; removing portions of the masking layer, the semiconductor substrate, and the first gate conductor layer to define the gate structure by etching; executing a cleaning process to the semiconductor with a specific cleaning agent for etching the second gate conductor layer, thereby removing portions of the second gate conductor layer in the gate structure; and performing a thermal treatment process to the semiconductor substrate and forming an insulation spacer on the side surface of the gate structure.

Abstract translation: 提供一种形成栅极结构的方法。 成形方法包括提供半导体衬底的步骤; 在半导体衬底上形成绝缘层，第一栅极导体层，第二栅极导体层和掩模层; 去除掩模层，半导体衬底和第一栅极导体层的部分，以通过蚀刻限定栅极结构; 利用用于蚀刻第二栅极导体层的特定清洁剂对半导体执行清洁处理，从而去除栅极结构中的第二栅极导体层的部分; 对所述半导体基板进行热处理，在所述栅极结构的侧面形成绝缘间隔物。