公开(公告)号：US10604844B2

公开(公告)日：2020-03-31

申请号：US15979309

申请日：2018-05-14

Applicant: Purdue Research Foundation

Inventor： Zhihong Chen ,  Shengjiao Zhang

IPC: C23C16/50 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3213 ,  C23C16/26 ,  C23C16/56 ,  C23F1/14 ,  C23C14/18 ,  C23C14/20 ,  C23C14/58 ,  C23C14/34 ,  C23C14/30

Abstract: A method of growing graphene at low temperature on a substrate. The method includes placing a substrate with a layer of cobalt deposited thereon in a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a carbon precursor gas to the PECVD chamber, generating plasma at between about 350° C. and about 800° C. to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer and enabling a plurality of the carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer, removing carbon atoms from top of the cobalt layer, and removing the cobalt layer.