专利检索 ap:("QUALCOMM Incorporated") AND inv:"Jeffrey Xu" 第 1 页

1.

发明授权
Self-aligned quadruple patterning process for Fin pitch below 20nm 有权

公开(公告)号：US10559501B2

公开(公告)日：2020-02-11

申请号：US15271043

申请日：2016-09-20

申请人： QUALCOMM Incorporated

发明人： Stanley Song , Jeffrey Xu , Da Yang , Kern Rim , Choh Fei Yeap

IPC分类号： H01L21/8238 , H01L27/092 , H01L29/10 , H01L29/66 , H01L21/3065

摘要： A method of producing a FinFET device with fin pitch of less than 20 nm is presented. In accordance with some embodiments, fins are deposited on sidewall spacers, which themselves are deposited on mandrels. The mandrels can be formed by lithographic processes while the fins and sidewall spacers formed by deposition technologies.