公开(公告)号：US09679855B1

公开(公告)日：2017-06-13

申请号：US15082954

申请日：2016-03-28

Applicant: QUALCOMM Incorporated

Inventor： Jae Sik Lee ,  Hong Bok We ,  Dong Wook Kim ,  Jon Aday

IPC: H01L23/544 ,  H01L21/301 ,  H01L21/46 ,  H01L21/78 ,  H01L23/00

CPC classification number: H01L23/562 ,  H01L22/34 ,  H01L23/3178 ,  H01L23/544 ,  H01L2223/5446 ,  H01L2224/11

Abstract: Some implementations provide a semiconductor device (e.g., die, wafer) that includes a substrate, that is configured with trenches that are dry-etched into a surface of the substrate inside an area defined by scribe lines of the substrate. A crack stop structure is provided for the semiconductor device that includes a polymer dielectric layer coating that fills the trenches with a polymer dielectric material and provides a dielectric layer over the surface of the substrate inside the area. The polymer dielectric layer coating and trenches are configured to reduce cracking or chipping of the substrate in the area defined by scribe lines after cutting.