公开(公告)号：US10410965B2

公开(公告)日：2019-09-10

申请号：US16159042

申请日：2018-10-12

Applicant: QUALCOMM Incorporated

Inventor： Tin Tin Wee ,  Trilochan Sahoo ,  Sunil Sukumarapillai ,  Arun Kumar Kodigenahalli Venkateswar

IPC: H01L23/522 ,  H01L29/78 ,  H01L27/088 ,  H01L29/417 ,  H01L21/8234

Abstract: A die includes one or more fins, a gate formed over a first portion of the one or more fins, and a first source/drain contact formed over a second portion of the one or more fins, wherein the first source/drain contact includes an extended portion that does not overlap the one or more fins. The die also includes first and second metal lines formed from a first metal layer, wherein the first and second metal lines are spaced apart. The die further includes a first via connecting the first source/drain contact to the first metal line, and a second via connecting the first source/drain contact to the second metal line, wherein the second via lies within the extended portion of the first source/drain contact.

公开(公告)号：US10325845B2

公开(公告)日：2019-06-18

申请号：US15628909

申请日：2017-06-21

Applicant: QUALCOMM Incorporated

Inventor： Tin Tin Wee ,  Trilochan Sahoo ,  Sunil Sukumarapillai ,  Arun Kumar Kodigenahalli Venkateswar

IPC: H01L23/522 ,  H01L29/78 ,  H01L27/088 ,  H01L29/417

Abstract: In certain aspects of the disclosure, a die includes one or more fins, a gate formed over a first portion of the one or more fins, and a first source/drain contact formed over a second portion of the one or more fins, wherein the first source/drain contact includes an extended portion that does not overlap the one or more fins. The die also includes first and second metal lines formed from a first metal layer, wherein the first and second metal lines are spaced apart. The die further includes a first via connecting the first source/drain contact to the first metal line, and a second via connecting the first source/drain contact to the second metal line, wherein the second via lies within the extended portion of the first source/drain contact.

公开(公告)号：US20180374792A1

公开(公告)日：2018-12-27

申请号：US15628909

申请日：2017-06-21

Applicant: QUALCOMM Incorporated

Inventor： Tin Tin Wee ,  Trilochan Sahoo ,  Sunil Sukumarapillai ,  Arun Kumar Kodigenahalli Venkateswar

IPC: H01L23/522 ,  H01L29/78 ,  H01L27/088 ,  H01L29/417

Abstract: In certain aspects of the disclosure, a die includes one or more fins, a gate formed over a first portion of the one or more fins, and a first source/drain contact formed over a second portion of the one or more fins, wherein the first source/drain contact includes an extended portion that does not overlap the one or more fins. The die also includes first and second metal lines formed from a first metal layer, wherein the first and second metal lines are spaced apart. The die further includes a first via connecting the first source/drain contact to the first metal line, and a second via connecting the first source/drain contact to the second metal line, wherein the second via lies within the extended portion of the first source/drain contact.