公开(公告)号：US20230092546A1

公开(公告)日：2023-03-23

申请号：US17481618

申请日：2021-09-22

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar VEDULA ,  Vikram SEKAR

IPC: H01L27/12 ,  H01L23/535

Abstract: A dual-sided MOS IC includes an isolation layer and a MOS transistor. The isolation layer separates the MOS IC into a MOS IC frontside and a MOS IC backside. The MOS transistor is on both the MOS IC frontside and the MOS IC backside. The MOS transistor includes MOS gates, a first source connection in a first subsection of the MOS IC frontside, and a second source connection in a second subsection of the MOS IC backside. The first and second source connections are electrically coupled together through a first front-to-backside connection extending through the isolation layer. The MOS transistor further includes a first drain connection in the first subsection of the MOS IC backside, and a second drain connection in the second subsection of the MOS IC frontside. The first and second drain connections are electrically coupled together through a second front-to-backside connection extending through the isolation layer.