LAYER FOR REDUCED CHARGE MIGRATION BETWEEN MEMS LAYERS
    1.
    发明申请
    LAYER FOR REDUCED CHARGE MIGRATION BETWEEN MEMS LAYERS 审中-公开
    MEMS层之间减少充电移动的层次

    公开(公告)号:US20140210836A1

    公开(公告)日:2014-07-31

    申请号:US13751785

    申请日:2013-01-28

    Abstract: This disclosure provides systems, methods and apparatus for reducing image artifacts that arise when a display is exposed to sunlight over time. Various implementations disclosed herein can be implemented to prevent charge injection from inducing a negative offset voltage shift for display elements in the display. In one aspect, a buffer layer is applied to block electrons from being photoelectrically ejected from a movable reflective layer of a display element and into a stationary optical stack of the display element.

    Abstract translation: 本公开提供了用于减少当显示器随时间暴露于阳光下时出现的图像伪像的系统,方法和装置。 可以实现本文公开的各种实现方式,以防止电荷注入对显示器中的显示元件引起负偏移电压偏移。 一方面,施加缓冲层以阻挡电子从显示元件的可移动反射层光电喷射到显示元件的固定光学堆叠中。

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