公开(公告)号：US20080268281A1

公开(公告)日：2008-10-30

申请号：US11741375

申请日：2007-04-27

申请人： Quan Bai ,  Patrick Rymer ,  Jose Gonzalez ,  Gary Groshong

发明人： Quan Bai ,  Patrick Rymer ,  Jose Gonzalez ,  Gary Groshong

IPC分类号： B32B15/01

CPC分类号： C23C14/564 ,  H01J37/32623 ,  Y10T428/12736 ,  Y10T428/12806 ,  Y10T428/12847 ,  Y10T428/12979 ,  Y10T428/12986

摘要： The invented shield components are used for a plasma processing system to adhere deposition materials or process residuals during wafer processing, thus preventing excessive wafer contamination, even when exposed to high temperatures. One embodiment of the invented shields consists of a reaction barrier layer to separate the underlying substrate from the overlying spray coating to prevent solid-state chemical reaction between the substrate and the coating. Another embodiment of the invented shields consists of a substrate and a coating with a substrate-coating combination chosen to allow no new solid-state phase to form at the interface. The invented shields have well-bonded materials interfaces that preserve thermal and mechanical stability under high temperature conditions in a plasma processing system for the containment of deposition contaminates.

摘要翻译： 本发明的屏蔽部件用于等离子体处理系统，以在晶片处理期间粘附沉积材料或处理残留物，从而即使在暴露于高温下也能防止过度的晶片污染。 本发明屏蔽件的一个实施例由反应阻挡层组成，以将下面的基材与上覆的喷涂层分离，以防止基材和涂层之间的固态化学反应。 本发明的屏蔽的另一实施例由基底和具有基底涂层组合的涂层组成，所述涂层选择为不允许在界面处形成新的固态相。 本发明的屏蔽件具有良好结合的材料界面，其在用于容纳沉积污染物的等离子体处理系统中在高温条件下保持热和机械稳定性。