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公开(公告)号：US20190273012A1
公开(公告)日：2019-09-05
申请号：US16325410
申请日：2017-08-16
Applicant: RAMOT AT TEL-AVIV UNIVERSITY LTD.
Inventor： Yoram DAGAN , Gil MARKOVICH , Alon RON , Amir HEVRONI
IPC: H01L21/762 , H01L21/02
Abstract: A method of fabricating a heterostructure system, comprises epitaxially growing a crystalline layer of a first substance on a crystalline base layer by surface catalysis in a solution, wherein the growth is self-terminated once a monolayer of the substance is formed on the base layer.
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