专利检索 ap:("RAYTHEON BBN TECHNOLOGIES CORP." OR "Columbia University") AND inv:"Matthew Elliott WARE" 第 1 页

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发明申请
VAN DER WAALS CAPACITOR AND QUBIT USING SAME 有权

公开(公告)号：US20230015299A1

公开(公告)日：2023-01-19

申请号：US17686832

申请日：2022-03-04

申请人： RAYTHEON BBN TECHNOLOGIES CORP. , Columbia University

发明人： Matthew Elliott WARE , Anjaly Thekkevilayil RAJENDRAN , Guilhem Jean Antoine RIBEILL , Thomas OHKI , James Curtis HONE , Martin GUSTAFSSON , Luke GOVIA , Kin Chung FONG , Abhinandan ANTONY

IPC分类号： H01G4/008 , G06N10/00 , H01L39/22

摘要： A van der Waals capacitor and a qubit constructed with such a capacitor. In some embodiments, the capacitor includes a first conductive layer; an insulating layer, on the first conductive layer; and a second conductive layer on the insulating layer. The first conductive layer may be composed of one or more layers of a first van der Waals material, the insulating layer may be composed of one or more layers of a second van der Waals material, and the second conductive layer may be composed of one or more layers of a third van der Waals material.