Electro-optical memory employing ferroelectric element
    1.
    发明授权
    Electro-optical memory employing ferroelectric element 失效
    使用电光元件的电光存储器

    公开(公告)号:US3680060A

    公开(公告)日:1972-07-25

    申请号:US3680060D

    申请日:1970-04-10

    Applicant: RCA CORP

    CPC classification number: G11C13/047 G02F1/0533 G11C13/044

    Abstract: A photoconductive-ferroelectric device is employed as an erasable storage medium for recording and reading light patterns. The ferroelectric material may be a bismuth titanate crystal and its polarization pattern (corresponding to the recorded light pattern) is read out by directing linearly polarized light at the ab-face of the crystal, at an angle to the c-axis of the crystal and preferably perpendicular to the b-axis of the crystal. With proper choice of the direction of linear polarization, the incident light is phase delayed different amounts in the differently polarized regions of the crystal and this difference in phase may be detected and employed as the basis for reconstructing the light pattern. Operation in this way is found to provide substantially greater readout efficiency than has been available heretofore.

    Abstract translation: 光导电铁电元件被用作用于记录和读取光图案的可擦除存储介质。 铁电材料可以是钛酸铋晶体,并且通过在晶体的表面处以与晶体的c轴成一角度的方式引导线偏振光,读取其偏振图案(对应于记录的光图案),以及 优选垂直于晶体的b轴。 通过适当选择线性偏振的方向,入射光在晶体的不同极化区域中的相位延迟不同,并且可以检测该相位差,并将其用作重建光图案的基础。 发现以这种方式的操作提供比迄今可获得的显着更大的读出效率。

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