专利检索 ap:("RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY") AND inv:"Namhun Kim" 第 1 页

1.

发明授权
Electroluminescent diode having delayed florescence quantum dot 有权

公开(公告)号：US09899619B2

公开(公告)日：2018-02-20

申请号：US15374450

申请日：2016-12-09

申请人： RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

发明人： Jun Yeob Lee , Heeyeop Chae , Namhun Kim , Sangkyu Jeon

IPC分类号： H01L51/50 , H01L51/56

CPC分类号： H01L51/502 , H01L51/5004 , H01L51/56 , H01L2251/552

摘要： The present invention relates to a delayed fluorescence-quantum dot (QD) electroluminescent diode, the delayed fluorescence-quantum dot electroluminescent diode includes an anode, a cathode, and a light emitting layer located between the anode and the cathode, and the light emitting layer includes a QD and a delayed fluorescence material which supplies energy to the QD.