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公开(公告)号:US11362224B2
公开(公告)日:2022-06-14
申请号:US17072199
申请日:2020-10-16
发明人: Sung Joo Lee , Jae Ho Jeon , Seung Hyuk Choi , Jin Hong Park
IPC分类号: H01L31/0352 , H01L31/108 , H01L31/18
摘要: Disclosed is a photodetector in which a plurality of conductive stripes spaced apart from each other are bonded onto a two-dimensional semiconductor thin-film, and a pitch between adjacent conductive stripes is controlled to selectively adjust a plasmonic resonance wavelength zone, such that the photodetector has a high absorbance and a wide detection zone at the same time. Further, a manufacturing method thereof is disclosed. The photodetector includes a semiconductor thin-film; and a plurality of conductive stripes bonded onto the semiconductor thin-film and extending in a parallel manner to each other and spaced apart from each other.
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公开(公告)号:US11605650B2
公开(公告)日:2023-03-14
申请号:US17095259
申请日:2020-11-11
发明人: Sung Joo Lee , Jeong Ho Cho , Jae Ho Jeon , Hyeon Je Son , Hae Ju Choi , Min Je Kim
摘要: A negative transconductance device is disclosed. The negative transconductance device includes a first transistor having a P-type semiconductor channel, a second transistor having an N-type semiconductor channel, and a third transistor having an ambipolar semiconductor channel and positioned between the first and second transistors. A first drain electrode of the first transistor is electrically connected to a third source electrode of the third transistor, and a drain electrode of the third transistor is electrically connected to a second source electrode of the second transistor.
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