公开(公告)号：US20170324016A1

公开(公告)日：2017-11-09

申请号：US15585428

申请日：2017-05-03

Applicant: RESEARCH TRIANGLE INSTITUTE

Inventor： Philip BARLETTA ,  Brian GRANT ,  Erik Paul VICK ,  Christopher GREGORY

IPC: H01L35/30 ,  H01L35/32 ,  H01L35/18 ,  H01L35/34 ,  H01L35/16

CPC classification number: H01L35/30 ,  H01L23/38 ,  H01L35/16 ,  H01L35/18 ,  H01L35/32 ,  H01L35/34

Abstract: A method of forming a thermoelectric device structure and the resultant thermoelectric device structure. The method forms a first pattern of epitaxial thermoelectric elements of a first conductivity type on a first semiconductor substrate, forms a second pattern of epitaxial thermoelectric elements of a second conductivity type on a second semiconductor substrate, separates the epitaxial thermoelectric elements of the first conductivity type and places the epitaxial thermoelectric elements of the first conductivity type and the epitaxial thermoelectric elements of the second conductivity type on a heat sink, and integrates the heat sink to a device substrate including an electronic device to be cooled.