公开(公告)号：US20160079443A1

公开(公告)日：2016-03-17

申请号：US14526843

申请日：2014-10-29

Applicant: RICHTEK TECHNOLOGY CORP

Inventor： Chung-Yu Hung ,  Ching-Yao Yang ,  Tzu-Cheng Kao ,  Tsung-Yi Huang ,  Wu-Te Weng

IPC: H01L29/872 ,  H01L27/02

CPC classification number: H01L29/872 ,  H01L27/0248 ,  H01L29/0619 ,  H01L29/0646

Abstract: A JBS diode includes a silicon substrate, a first P doped region, a metal layer, a second P doped region, and a first N doped region. The silicon substrate includes an upper surface. An NBL is provided in the bottom of the silicon substrate. An N well is provided between the upper surface and the NBL. The first P doped region is arranged in the N well, and extending downward from the upper surface. The metal layer covers the upper surface, and located on a side of the first P doped region. The second P doped region is arranged in the N well, extending downward from the upper surface, and located at the other side of the first P doped region. The first N doped region is arranged in the N well, extending downward from the upper surface, and located at the other side of the first P doped region.

Abstract translation: JBS二极管包括硅衬底，第一P掺杂区，金属层，第二P掺杂区和第一N掺杂区。 硅衬底包括上表面。 在硅衬底的底部提供NBL。 在上表面和NBL之间设有一个N孔。 第一P掺杂区域布置在N阱中，并从上表面向下延伸。 金属层覆盖上表面，并且位于第一P掺杂区域的一侧。 第二P掺杂区域布置在N阱中，从上表面向下延伸，并且位于第一P掺杂区域的另一侧。 第一N掺杂区域布置在N阱中，从上表面向下延伸，并且位于第一P掺杂区域的另一侧。