公开(公告)号：US11063148B2

公开(公告)日：2021-07-13

申请号：US15909277

申请日：2018-03-01

Applicant: RICHTEK TECHNOLOGY CORPORATION

Inventor： Tsung-Yi Huang ,  Ching-Yao Yang

IPC: H01L21/8234 ,  H01L21/761 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L27/088

Abstract: A high voltage depletion mode MOS device with adjustable threshold voltage includes: a first conductive type well region; a second conductive type channel region, wherein when the channel region is not depleted, the MOS device is conductive, and when the channel region is depleted, the MOS device is non-conductive; a second conductive type connection region which contacts the channel region; a first conductive type gate, for controlling the conductive condition of the MOS device; a second conductive type lightly doped diffusion region formed under a spacer layer of the gate and contacting the channel region; a second type source region; and a second type drain region contacting the connection region but not contacting the gate; wherein the gate has a first conductive type doping or both a first and a second conductive type doping, and wherein a net doping concentration of the gate is determined by a threshold voltage target.

公开(公告)号：US20180315851A1

公开(公告)日：2018-11-01

申请号：US15909277

申请日：2018-03-01

Applicant: RICHTEK TECHNOLOGY CORPORATION

Inventor： Tsung-Yi Huang ,  Ching-Yao Yang

IPC: H01L29/78

Abstract: A high voltage depletion mode MOS device with adjustable threshold voltage includes: a first conductive type well region; a second conductive type channel region, wherein when the channel region is not depleted, the MOS device is conductive, and when the channel region is depleted, the MOS device is non-conductive; a second conductive type connection region which contacts the channel region; a first conductive type gate, for controlling the conductive condition of the MOS device; a second conductive type lightly doped diffusion region formed under a spacer layer of the gate and contacting the channel region; a second type source region; and a second type drain region contacting the connection region but not contacting the gate; wherein the gate has a first conductive type doping or both a first and a second conductive type doping, and wherein a net doping concentration of the gate is determined by a threshold voltage target.