SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

    公开(公告)号:US20240312878A1

    公开(公告)日:2024-09-19

    申请号:US18677332

    申请日:2024-05-29

    Applicant: ROHM CO., LTD.

    Inventor: Hiroaki AOYAMA

    Abstract: A semiconductor device includes: a lead including a main section that includes an obverse surface facing a first side in a thickness direction z; a semiconductor element supported by the obverse surface; and a sealing resin covering a portion of the lead and the semiconductor element. The lead includes a base member and a metal layer covering a portion of the base member. The lead includes a plurality of first terminal sections aligned in a first direction perpendicular to the thickness direction z. Each of the plurality of first terminal sections includes a first mounting surface facing a second side in the thickness direction, and a first side surface facing in a second direction perpendicular to the thickness direction z and the first direction. The first mounting surface and the first side surface are exposed from the sealing resin, and the first mounting surface and the first side surface are entirely formed of the metal layer.

    SEMICONDUCTOR DEVICE
    2.
    发明申请

    公开(公告)号:US20240379507A1

    公开(公告)日:2024-11-14

    申请号:US18777108

    申请日:2024-07-18

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor device includes a lead, a semiconductor element, a sealing resin, and a first conductive section. The lead includes an obverse surface facing in a thickness direction. The semiconductor element includes a circuit section, an element first surface, and first electrodes on the element first surface. The first electrodes are connected to the obverse surface. The sealing resin covers the lead partially and the semiconductor element. The lead includes first terminal sections and a second terminal section aligned in a first direction crossing the thickness direction. Each first electrode is electrically connected to the circuit section. Each first terminal section is electrically connected to the circuit section via one first electrode. The first conductive section is between the second terminal section and the element first surface and connected to the second terminal section and the element first surface. The first conductive section is insulated from the circuit section.

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