公开(公告)号：US11621279B2

公开(公告)日：2023-04-04

申请号：US16425568

申请日：2019-05-29

申请人： ROHM CO., LTD.

发明人： Ryuta Yaginuma

IPC分类号： H01L27/12 ,  H01L21/762 ,  H01L23/50 ,  H01L21/84 ,  H01L29/866 ,  H01L29/66

摘要： A semiconductor device includes a semiconductor layer, a transistor cell portion, formed in the semiconductor layer, a first trench, formed in the semiconductor layer, a diode, electrically separated from the transistor cell portion and having a first conductivity type portion and a second conductivity type portion disposed inside the first trench, a second trench, formed in the semiconductor layer, and a bidirectional Zener diode, electrically connected to the transistor cell portion and having a pair of first conductivity type portions, disposed inside the second trench, and at least one second conductivity type portion, formed between the pair of first conductivity type portion.