公开(公告)号：US20240421203A1

公开(公告)日：2024-12-19

申请号：US18820307

申请日：2024-08-30

Applicant: ROHM CO., LTD.

Inventor： Shojiro KATO ,  Keita OKAMOTO ,  Shuntaro TAKAHASHI

IPC: H01L29/417 ,  H01L23/538 ,  H01L27/02 ,  H01L27/088

Abstract: A semiconductor device includes an insulated gate type first transistor that is formed at a semiconductor chip, an insulated gate type second transistor that is formed at the semiconductor chip, and a control wiring that transmits a control signal controlling the first transistor and the second transistor to reach an ON state during a normal operation and controlling the first transistor to reach an OFF state and the second transistor to reach an ON state during an active clamp operation.