专利检索 ap:("ROHM CO., LTD.") AND inv:"Toshiyuki Shiraishi" 第 1 页

1.

发明授权
Ferroelectric memory array surrounded by ferroelectric dummy capacitors 有权

公开(公告)号：US11101275B2

公开(公告)日：2021-08-24

申请号：US15356749

申请日：2016-11-21

申请人： ROHM CO., LTD.

发明人： Takanori Ozawa , Izumi Yano , Toshiyuki Shiraishi

IPC分类号： H01L27/11514 , H01L27/11507 , H01L49/02

摘要： A nonvolatile logic cell (nonvolatile storage element) 21 includes ferroelectric capacitors 25 and MOSFETs 26. A plurality of ferroelectric dummy capacitors 32 and 33 are formed in a periphery of the nonvolatile logic cell 21. Each of the ferroelectric capacitors 25 and the ferroelectric dummy capacitors 32 and 33 includes a lower electrode 51, a ferroelectric film 52 formed above the lower electrode 51, and an upper electrode 53 formed above the ferroelectric film 52.