公开(公告)号：US6093966A

公开(公告)日：2000-07-25

申请号：US44852

申请日：1998-03-20

申请人： Ramnath Venkatraman ,  John Mendonca ,  Gregory N. Hamilton ,  Jeffrey T. Wetzel ,  Tze W. Poon ,  Sam S. Garcia

发明人： Ramnath Venkatraman ,  John Mendonca ,  Gregory N. Hamilton ,  Jeffrey T. Wetzel ,  Tze W. Poon ,  Sam S. Garcia

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/72

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/76807 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002

摘要： A method of forming a semiconductor device by first providing a substrate in a processing chamber. The substrate has an insulating layer and an opening in the insulating layer. A copper barrier layer is formed on the insulating layer and in the opening by providing a plurality of refractory metal atoms and a plurality of silicon atoms in the processing chamber. The atoms are ionized by applying a first bias to the atoms to form a plasma. The substrate is then biased by a first stage bias followed by a second stage bias to accelerate the plasma to the substrate to form the copper barrier layer, where the first stage bias is less than the second stage bias. The copper-containing metal is then deposited on the copper barrier layer over the insulating layer and in the opening. The present invention further includes a semiconductor device formed by the above method.

摘要翻译： 一种通过首先在处理室中提供衬底来形成半导体器件的方法。 衬底在绝缘层中具有绝缘层和开口。 通过在处理室中设置多个难熔金属原子和多个硅原子，在绝缘层和开口中形成铜阻挡层。 通过对原子施加第一偏压来形成等离子体来离子化原子。 然后通过第一级偏置然后进行第二级偏置来偏置衬底，以将等离子体加速到衬底以形成铜阻挡层，其中第一级偏压小于第二级偏置。 然后将该含铜金属沉积在绝缘层上和开口中的铜阻挡层上。 本发明还包括通过上述方法形成的半导体器件。