公开(公告)号：US10439035B2

公开(公告)日：2019-10-08

申请号：US16033500

申请日：2018-07-12

Applicant: Raytheon Company

Inventor： Kamal Tabatabaie-Alavi ,  Kezia Cheng ,  Christopher J. MacDonald

IPC: H01L29/80 ,  H01L29/47 ,  H01L21/285 ,  H01L29/20 ,  H01L29/78 ,  H01L29/778

Abstract: A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The Schottky contact comprises: a first layer of a first metal in Schottky contact with a semiconductor; a second layer of a second metal on the first layer; a third layer of the first metal on the second layer; and a fourth layer of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky contact comprises a third metal, the second metal providing a barrier against migration between the third metal and the first metal.

公开(公告)号：US20180323274A1

公开(公告)日：2018-11-08

申请号：US16033500

申请日：2018-07-12

Applicant: Raytheon Company

Inventor： Kamal Tabatabaie-Alavi ,  Kezia Cheng ,  Christopher J. MacDonald

IPC: H01L29/47 ,  H01L29/778 ,  H01L21/285 ,  H01L29/20 ,  H01L29/78

Abstract: A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The Schottky contact comprises: a first layer of a first metal in Schottky contact with a semiconductor; a second layer of a second metal on the first layer; a third layer of the first metal on the second layer; and a fourth layer of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky contact comprises a third metal, the second metal providing a barrier against migration between the third metal and the first metal.

公开(公告)号：US10026823B1

公开(公告)日：2018-07-17

申请号：US15452986

申请日：2017-03-08

Applicant: Raytheon Company

Inventor： Kamal Tabatabaie-Alavi ,  Kezia Cheng ,  Christopher J. MacDonald

IPC: H01L29/80 ,  H01L29/47 ,  H01L21/285 ,  H01L29/20 ,  H01L29/78

Abstract: A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The Schottky contact comprises: a first layer of a first metal in Schottky contact with a semiconductor; a second layer of a second metal on the first layer; a third layer of the first metal on the second layer; and a fourth layer of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky contact comprises a third metal, the second metal providing a barrier against migration between the third metal and the first metal.