Test circuit and method for reading data from a memory device during memory dump

    公开(公告)号:US12211570B2

    公开(公告)日:2025-01-28

    申请号:US18129087

    申请日:2023-03-31

    Abstract: A test circuit coupled to a memory device and configured to read data stored in the memory device during a memory dump, includes a dump controller and a pattern generator. The dump controller triggers the pattern generator to start a pattern generating operation in response to a setting of memory dump mode by a processor. The pattern generator generates multiple control signals in the pattern generating operation and provides the control signals to the memory device. The control signals include an address signal, a memory enable signal and a read enable signal. The address signal includes multiple memory addresses arranged in multiple consecutive clock cycles of the processor. The consecutive clock cycles of the processor is provided to read the data stored in the memory addresses.

    Test circuit and method for reading data from a memory device during memory dump

    公开(公告)号:US20230335208A1

    公开(公告)日:2023-10-19

    申请号:US18129087

    申请日:2023-03-31

    CPC classification number: G11C29/10 G11C29/12015 G11C7/1069

    Abstract: A test circuit coupled to a memory device and configured to read data stored in the memory device during a memory dump, includes a dump controller and a pattern generator. The dump controller triggers the pattern generator to start a pattern generating operation in response to a setting of memory dump mode by a processor. The pattern generator generates multiple control signals in the pattern generating operation and provides the control signals to the memory device. The control signals include an address signal, a memory enable signal and a read enable signal. The address signal includes multiple memory addresses arranged in multiple consecutive clock cycles of the processor. The consecutive clock cycles of the processor is provided to read the data stored in the memory addresses.

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