Dual-mode high-side power field-effect transistor driver for power regulators

    公开(公告)号:US12057765B2

    公开(公告)日:2024-08-06

    申请号:US17707329

    申请日:2022-03-29

    IPC分类号: H02M1/08 H02M3/155

    CPC分类号: H02M1/08 H02M3/155

    摘要: Apparatuses and methods for operating a power converter are described. An integrated circuit can be integrated in a high-side driver of a high-side fiend-effect transistor (FET) of the power converter. The integrated circuit can detect a phase node voltage of a power integrated circuit. The integrated circuit can, in response to the phase node voltage being less than a threshold voltage, operate a high-side FET of the power integrated circuit in a constant-current mode. The integrated circuit can, in response to the phase node voltage being greater than the threshold voltage, operate the high-side FET of the power integrated circuit in a constant-voltage mode.