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公开(公告)号：US10546802B2
公开(公告)日：2020-01-28
申请号：US15908597
申请日：2018-02-28
Applicant: Renesas Electronics Corporation
Inventor： Hiroaki Sekikawa , Shigeo Tokumitsu , Asuka Komuro
IPC: H01L23/48 , H01L29/06 , H01L21/768 , H01L21/762 , H01L23/522 , H01L27/092
Abstract: A substrate contact plug which is connected to a wiring and a semiconductor substrate and does not form a circuit is formed in a seal ring region in a peripheral portion of a semiconductor chip region. The substrate contact plug is buried in a trench which is deeper than an element isolation trench.
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