公开(公告)号：US20150076619A1

公开(公告)日：2015-03-19

申请号：US14459478

申请日：2014-08-14

Applicant: Renesas Electronics Corporation

Inventor： Kenji ADACHI ,  Yukio MAKI

IPC: H01L27/11 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L27/1108 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/0207 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Variations in the contact area between contact plugs are suppressed to suppress fluctuations in contact resistance. In three third interlayer insulating films, a contact hole is self-alignedly formed to extend through the portions thereof interposed between two wiring portions and the portions thereof interposed between two gate wiring portions and reach a first polysilicon plug. In the contact hole, a second polysilicon plug is formed to come in contact with the first polysilicon plug.

Abstract translation: 抑制接触插塞之间的接触面积的变化以抑制接触电阻的波动。 在三层第三层间绝缘膜中，接触孔被自对准地形成，以延伸穿过两个布线部分之间的部分和插入在两个栅极布线部分之间的部分并到达第一多晶硅插塞。 在接触孔中，形成第二多晶硅插塞以与第一多晶硅插塞接触。