公开(公告)号：US20160187204A1

公开(公告)日：2016-06-30

申请号：US14928856

申请日：2015-10-30

Applicant: Renesas Electronics Corporation

Inventor： Naoya ARISAKA ,  Masataka MINAMI ,  Takahiro MIKI

IPC: G01K7/01 ,  H03K21/00

CPC classification number: G01K7/01 ,  G01K2217/00 ,  G01K2219/00 ,  H03K21/00 ,  H03K21/38

Abstract: The present invention provides a semiconductor device having a sensor capable of improving precision while suppressing increase in occupation area. A semiconductor device has: a first counter; and a second counter (time measuring circuit) measuring time until a count value, which is obtained by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the first counter. The first counter obtains a piece of digital information corresponding to the first voltage on the basis of a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, on the basis of the time measured by the time measuring circuit.

Abstract translation: 本发明提供一种具有能够在抑制占用面积增加的同时提高精度的传感器的半导体装置。 半导体器件具有：第一计数器; 并且通过对具有对应于第一电压的频率的第一信号进行计数而得到的计数值的第二计数器（时间测量电路）达到可以由第一计数器计数的最大计数值。 第一计数器基于通过对与具有与第一电压不同的第二电压的频率的第二信号进行计数而获得的计数值，基于时间来获得与第一电压对应的数字信息 由时间测量电路测量。

公开(公告)号：US20180073935A1

公开(公告)日：2018-03-15

申请号：US15818357

申请日：2017-11-20

Applicant: Renesas Electronics Corporation

Inventor： Naoya ARISAKA ,  Masataka MINAMI ,  Takahiro MIKI

IPC: G01K7/01 ,  H03K21/38 ,  H03K21/00

CPC classification number: G01K7/01 ,  G01K2217/00 ,  G01K2219/00 ,  H03K21/00 ,  H03K21/38

Abstract: A method of sensing a temperature of a semiconductor device, includes: measuring, by a time measuring circuit, time until a count value, which is obtained from a counter by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the counter; and obtaining, by the counter, a piece of digital information corresponding to the first voltage based on a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, based on the time measured by the time measuring circuit, the first voltage depending upon the temperature of the semiconductor device.