公开(公告)号：US09023717B2

公开(公告)日：2015-05-05

申请号：US14485649

申请日：2014-09-12

Applicant: Renesas Electronics Corporation

Inventor： Kazuyuki Nakagawa ,  Shunichi Abe

IPC: H01L21/78 ,  H01L21/66

CPC classification number: H01L21/78 ,  H01L22/32 ,  H01L22/34 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2223/54473 ,  H01L2223/5448 ,  H01L2224/02166 ,  H01L2224/05554

Abstract: To provide a semiconductor device having improved reliability. A method of manufacturing a semiconductor device according to one embodiment includes a step of cutting, in a dicing region arranged between two chip regions adjacent to each other, a wafer along an extending direction of the dicing region. The dicing region has therein a plurality of metal patterns in a plurality of columns. In the step of cutting the wafer, one or more of the columns of metal patterns formed in a plurality of columns are removed, and the metal patterns of the column(s) different from the above-mentioned one or more of the columns are not removed.

Abstract translation: 提供具有提高的可靠性的半导体器件。 根据一个实施例的制造半导体器件的方法包括在切割区域的延伸方向上切割在彼此相邻的两个芯片区域之间的切割区域中的晶片的步骤。 切割区域中具有多个列中的多个金属图案。 在切割晶片的步骤中，去除在多个列中形成的一列或多列金属图案，并且与上述一个或多个列不同的列的金属图案不是 删除。