公开(公告)号：US10263066B2

公开(公告)日：2019-04-16

申请号：US13852917

申请日：2013-03-28

申请人： Renesas Electronics Corporation

发明人： Masayuki Hiroi ,  Takashi Sakoh

IPC分类号： H01L49/02 ,  H01L27/108 ,  H01L27/02 ,  H01L23/532 ,  H01L23/00

摘要： The present invention is directed to a semiconductor integrated circuit device that basically has a non-memory array area, a memory array area, and memory capacitors formed across lower embedded metal interconnection layers including a low-dielectric constant interlayer insulating film in the memory array area. In addition, a memory-periphery metal seal ring is provided in the lower embedded metal interconnection layers having at least the low-dielectric constant interlayer insulating film so as to surround the memory array area.