公开(公告)号：US20160282202A1

公开(公告)日：2016-09-29

申请号：US15177396

申请日：2016-06-09

Applicant: Renesas Electronics Corporation

Inventor： Tadashi KAMEYAMA ,  Takanobu NARUSE ,  Takayasu ITO

IPC: G01K15/00 ,  G01K7/01

CPC classification number: G01K15/00 ,  G01K1/00 ,  G01K7/00 ,  G01K7/01

Abstract: To suppress an increase in the number of voltage comparators with an expansion in a chip temperature detection range, a temperature sensor in a semiconductor device includes a temperature detection circuit for outputting a voltage according to the chip temperature, a reference voltage generating circuit for generating a plurality of reference voltages, and a plurality of voltage comparators for comparing each reference voltage obtained by the reference voltage generating circuit with an output voltage of the temperature detection circuit and thereby generating a chip temperature detection signal configured with multiple bits. Further, the temperature sensor includes a control circuit for controlling the reference voltages generated by the reference voltage generating circuit based on the chip temperature detection signal and thereby changing correspondence between the chip temperature detection signal and the chip temperature to shift a chip temperature detection range. It is possible to expand the chip temperature detection range by changing the correspondence between the chip temperature detection signal and the chip temperature, without increasing the number of voltage comparators.

Abstract translation: 为了抑制芯片温度检测范围扩大的电压比较器的数量的增加，半导体器件中的温度传感器包括：温度检测电路，用于根据芯片温度输出电压;基准电压产生电路，用于产生 多个参考电压，以及多个电压比较器，用于将由参考电压产生电路获得的每个参考电压与温度检测电路的输出电压进行比较，从而生成配置有多个位的芯片温度检测信号。 此外，温度传感器包括控制电路，用于基于芯片温度检测信号来控制由基准电压产生电路产生的参考电压，从而改变芯片温度检测信号和芯片温度之间的对应关系，以移动芯片温度检测范围。 通过改变芯片温度检测信号和芯片温度之间的对应关系，可以扩大芯片温度检测范围，而不增加电压比较器的数量。