公开(公告)号：US09337142B2

公开(公告)日：2016-05-10

申请号：US14753873

申请日：2015-06-29

申请人： Renesas Electronics Corporation

发明人： Toshihiko Miyazaki

IPC分类号： H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L27/115 ,  H01L49/02 ,  H01L21/768

CPC分类号： H01L23/5228 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53238 ,  H01L27/11573 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a semiconductor device including an oscillator and a manufacturing method thereof, in which cost is low and design flexibility is high. The semiconductor device includes a wiring structure region and an oscillator region. The semiconductor device also includes, in the oscillator region, a metal resistive element as the same layer as a conducting film over uppermost metal wiring in the wiring structure region.

公开(公告)号：US09099466B2

公开(公告)日：2015-08-04

申请号：US14070949

申请日：2013-11-04

申请人： Renesas Electronics Corporation

发明人： Toshihiko Miyazaki

IPC分类号： H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L27/115 ,  H01L49/02 ,  H01L21/768

CPC分类号： H01L23/5228 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53238 ,  H01L27/11573 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a semiconductor device including an oscillator and a manufacturing method thereof, in which cost is low and design flexibility is high. The semiconductor device includes a wiring structure region and an oscillator region. The semiconductor device also includes, in the oscillator region, a metal resistive element as the same layer as a conducting film over uppermost metal wiring in the wiring structure region.

摘要翻译： 提供了包括振荡器及其制造方法的半导体器件，其中成本低并且设计灵活性高。 半导体器件包括布线结构区域和振荡器区域。 半导体器件在振荡器区域中还包括金属电阻元件，作为与布线结构区域中最上层的金属布线的导电膜相同的层。

公开(公告)号：US20140125421A1

公开(公告)日：2014-05-08

申请号：US14070949

申请日：2013-11-04

申请人： Renesas Electronics Corporation

发明人： Toshihiko Miyazaki

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/5228 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53238 ,  H01L27/11573 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a semiconductor device including an oscillator arid a manufacturing method thereof, in which cost is low and design flexibility is high. The semiconductor device includes a wiring structure region and an oscillator region. The semiconductor device also includes, in the oscillator region, a metal resistive element as the same layer as a conducting film over uppermost metal wiring in the wiring structure region.

摘要翻译： 提供了包括振荡器的半导体器件及其制造方法，其中成本低并且设计灵活性高。 半导体器件包括布线结构区域和振荡器区域。 半导体器件在振荡器区域中还包括金属电阻元件，作为与布线结构区域中的最上层金属布线上的导电膜相同的层。