公开(公告)号：US20240313128A1

公开(公告)日：2024-09-19

申请号：US18541441

申请日：2023-12-15

Applicant: Renesas Electronics Corporation

Inventor： Zen INOUE ,  Yudai HIGA

IPC: H01L29/866 ,  H01L27/02 ,  H01L29/66

CPC classification number: H01L29/866 ,  H01L27/0255 ,  H01L29/66106

Abstract: A semiconductor device includes a first well region, a second well region, a body region, and a cathode region. The impurity concentration of the body region is higher than the impurity concentration of the first well region, and the impurity concentration of the second well region is higher than the impurity concentration of the body region. In plan view, the body region includes the cathode region, and the cathode region includes the second well region. The cathode region configures a cathode of a Zener diode, and the first well region, the second well region, and the body region configure an anode of the Zener diode.

公开(公告)号：US20250072018A1

公开(公告)日：2025-02-27

申请号：US18941036

申请日：2024-11-08

Applicant: Renesas Electronics Corporation

Inventor： Zen INOUE ,  Yudai HIGA

IPC: H01L29/866 ,  H01L27/02 ,  H01L29/66

Abstract: A semiconductor device includes a first well region, a second well region, a body region, and a cathode region. The impurity concentration of the body region is higher than the impurity concentration of the first well region, and the impurity concentration of the second well region is higher than the impurity concentration of the body region. In plan view, the body region includes the cathode region, and the cathode region includes the second well region. The cathode region configures a cathode of a Zener diode, and the first well region, the second well region, and the body region configure an anode of the Zener diode.