公开(公告)号：US20010019873A1

公开(公告)日：2001-09-06

申请号：US09822335

申请日：2001-04-02

Applicant: Research Triangle Institute

Inventor： Paul Enquist

IPC: H01L021/331

CPC classification number: H01L29/7722 ,  H01L29/66242 ,  H01L29/66318 ,  H01L29/7371

Abstract: A semiconductor device and method of fabricating the device. An emitter region is formed self centered and self aligned symmetrically with a base region. Using frontside processing techniques, a collector is formed symmetrically self-aligned with the base region and the emitter region. The collector region may be further formed self-centered with the base region using backside processing techniques. The self-aligned and self-centered symmetric structure virtually eliminates parasitic elements in the device significantly improving the device performance. The device is scalable on the order of approximately 0.1 microns. The method also provides reproduceability and repeatability of device characteristics necessary for commercial manufacture of the symmetric device.

Abstract translation: 一种半导体器件及其制造方法。 发射极区域与基极区域对称地形成为自对中和自对准。 使用前端处理技术，集电极形成为与基极区域和发射极区域对称自对准。 可以使用背面处理技术使收集器区域进一步与基部区域自身居中。 自对准和自对中结构的对称结构实际上消除了器件中的寄生元件，显着提高器件性能。 该器件的可扩展性约为0.1微米。 该方法还提供对称设备的商业制造所需的设备特性的可再现性和可重复性。